Mouser Electronics is now stocking the CY7C1049CV33 Fast Async SRAM from Cypress Semiconductor. Engineered using Cypress’s high-performance Complementary Metal Oxide Semiconductor (CMOS) technology, this 4Mbit, static RAM device is organised as 524,288 words by 8bits, provides a high-speed, maximum access time of 8ns and offers easy memory expansion with CE and OE features. Available in a 44-pin TSOP II package, this RoHS-compliant device is suitable for memory in a wide variety of applications.
The Cypress CY7C1049CV33 Fast Async SRAM, available from Mouser Electronics, offers easy memory access via an active LOW Chip Enable (CE), an active LOW Output Enable (OE), and tri-state drivers. Writing to the SRAM is accomplished by taking the Chip Enable (CE) and Write Enable (WE) inputs LOW. Data on the eight I/O pins (I/O0 through I/O7) is then written into the location specified on the address pins (A0 through A18). Reading from the CY7C1049CV33 is accomplished by taking Chip Enable (CE) and Output Enable (OE) LOW while forcing Write Enable (WE) HIGH. Under these conditions, the contents of the memory location specified by the address pins will appear on the I/O pins.
With an operating temperature of 0degC to +70degC, a maximum voltage rating of 3.6V, and a low active power rating of 360mW (max.), the Cypress CY7C1049CV33 is well suited for many low power commercial and industrial applications.
Other features of the Cypress CY7C1049CV33 include automatic power down when deselected, 2.0V data retention, and easy memory expansion.
Folow the link to learn more about the Cypress CY7C1049CV33.