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Low-height gate-drive TLP5702 photocoupler

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Low-height gate-drive TLP5702 photocouplerMouser Electronics is now stocking the TLP5702 GaAlAs Photocoupler from Toshiba. Designed to drive medium-powered, middle-sized IGBTs and power MOSFETs up to approximately 80A, the TLP5702 is one of the first photocouplers from Toshiba to use a low-height, small-footprint SO6L package. Based on a BiCMOS process technology, the device consists of a GaAlAs infrared light-emitting diode (LED) optically coupled to an integrated high-gain, high-speed photo detector IC.

The Toshiba TLP5702 GaAlAs Photocoupler features low power consumption and a low supply current of 3mA (max.). An internal noise shield provides a guaranteed common-mode transient immunity of 20kV/μs. The device has a supply voltage rating of 15V to 30V, a peak output current rating of 2.5A and a propagation delay of 200ns (max.). Maximum propagation delay time and propagation delay skew are guaranteed within the defined operational temperature range of up to 110degC, making the Toshiba TLP5702 reducing dead time in the inverter circuit while securing higher operational efficiency.

Combined with an original high-power, high-reliability infrared LED, this device offers high thermo-stability that is suitable for factory automation, home photovoltaic power systems, digital home appliances and control equipment. Other target applications for the Toshiba TLP5702 include MOSFET and IGBT Gate Drivers, uninterruptable power supplies, air conditioner inverters, transistor inverters, home appliances and induction cooktops.

When it comes to product safety, the Toshiba TLP5702 guarantees an 8mm (min.) distance between the point of origin and the point of termination along the surface of the electrical insulation, also known as creepage distance. For applications that require safety certification, the device also meets many safety standards, including international safety standards for reinforced insulation.

To learn more, visit the product page at TLP5702.

 
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