Mouser Electronics is now stocking the Gallium Nitride High Electron Mobility Transistor (HEMT) Monolithic Microwave Integrated Circuits (MMICs) from Cree. These new MMICs target X-band and C-band high-frequency applications.
Cree's GaN HEMT-based MMICs are high-power high-performance Gallium Nitride transistors. Gallium Nitride (GaN) is a wide bandgap material used for high-power, high-performance semiconductors with electrical characteristics superior to conventional silicon devices, useful in many applications including power conversion systems. High-speed GaN devices demonstrate noticeable performance advantages in sensitive radar equipment, satellite radios, and broadband amplifiers.
These new Cree GaN MMIC transistors provide very wide signal bandwidths in a small footprint. Minimum power output is 25Watts for the Cree CMPA5585025F MMIC for 5.5 to 8.5GHz C-band communications. The Cree CMPA801B025F MMIC provides 25Watts for the 8 to 11GHz X-band frequencies used for radar and communications systems. The high-end Cree CMPA601C025F MMIC supports the X-band operating frequencies from 6GHz up to 12GHz at 35Watts. These GaN MMICs are available in screw terminal mountings.
Cree GaN MMIC transistors target high-precision, high-reliability, high-frequency applications such as marine and land-based radar systems, broadband radio amplifiers, point-to-point radio systems, satellite communications including uplinks, and test equipment amplifiers.
To learn more about the Cree 12GHz GaN HEMT-based MMICs, visit www.mouser.com/new/cree/cree-gan-mmics.